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Soft-chemistry Route to P-I-N Heterostructured Quantum Dot Electroluminescence Device: All Solution-processed Polymer-Inorganic Hybrid QD-EL Device

  • Soon-Jae Kwon (a1), Kyung-Sang Cho (a2), Byoung-Lyong Choi (a3) and Byung-Ki Kim (a4)


p-i-n heterostructured quantum-dot electroluminescence (QD-EL) device was fabricated by soft-chemical process, which shows a low turn-on voltage comparable to OLEDs. To construct the multilayered device structure, p-type polymer semiconductor was deposited on the ITO glass by sequential process of coating and thermal curing, thereupon a few monolayers of QD was spin-coated. n-type metal-oxide film was deposited on top of the QD luminescence layer by sol-gel method, providing a facile and low-cost route for the ETL fabrication. Prior to solution-processed ETL construction, a post-treatment is performed using cross-linking agent, in order to chemically-immobilize the QDs. As a cathodic electrode, relatively air-stable aluminum was deposited. The constituent material as well as the electronic band structure of the integrated device guarantees operating stability in air and low turn-on voltage.



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1. Tang, C. W. and VanSlyke, S. A., Appl. Phys. Lett. 51, 913 (1987).
2. Fujihira, M., Do, L. M., Koike, A., and Han, E. M., Phys. Lett. 68, 1787 (1996).
3. Coe, S., Woo, W. K., Bawendi, M., and Vulovic, V., Nature 420, 800 (2002).
4. Mueller, A. H., Petruska, M. A., Archermann, M., Werder, D. J., Akhadov, E. A., Koleske, D. D., Hoffbauer, M. A., and Klimov, V. I., Nano Lett. 5, 1039 (2005).
5. Korean Patent Application No. 10-2006-0015159 (2006)
6. Caruge, J. M., Halpert, J. E., Bulovic, V., and Bawendi, M. G., Nano Lett. 6, 2991 (2006)



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