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Soft X-Ray Emission Studies of the Electronic Structure in Silicon Nanoclusters

Published online by Cambridge University Press:  15 February 2011

T. Van Buuren ,
L. N. Dinh ,
L. L. Chase ,
W. J. Siekhaus ,
I. Jimenez ,
L. J. Terminello ,
M. Grush ,
T. A. Callcott  and
J. A. Carlisle
T. Van Buuren
Affiliation:
Chemistry and Materials Science Department, Lawrence Livermore National Laboratory, Livermore, CA, 94556
L. N. Dinh
Affiliation:
Chemistry and Materials Science Department, Lawrence Livermore National Laboratory, Livermore, CA, 94556
L. L. Chase
Affiliation:
Chemistry and Materials Science Department, Lawrence Livermore National Laboratory, Livermore, CA, 94556
W. J. Siekhaus
Affiliation:
Chemistry and Materials Science Department, Lawrence Livermore National Laboratory, Livermore, CA, 94556
I. Jimenez
Affiliation:
Chemistry and Materials Science Department, Lawrence Livermore National Laboratory, Livermore, CA, 94556
L. J. Terminello
Affiliation:
Chemistry and Materials Science Department, Lawrence Livermore National Laboratory, Livermore, CA, 94556
M. Grush
Affiliation:
Department of Physics, University of Tennessee, Knoxville, TN 37996
T. A. Callcott
Affiliation:
Department of Physics, University of Tennessee, Knoxville, TN 37996
J. A. Carlisle
Affiliation:
Department of Physics, Virginia Commonwealth University, Richmond, VA 23284–2000
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Abstract

Density of states changes in the valence and conduction band of silicon nanoclusters were monitored using soft x-ray emission and absorption spectroscopy as a function of cluster size. A progressive increase in the valence band edge toward lower energy is found for clusters with decreasing diameters. A similar but smaller shift is observed in the near-edge x-ray absorption data of the silicon nanoclusters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 171
Copyright
Copyright © Materials Research Society 1997

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References

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