Skip to main content Accessibility help
×
Home

Size and critical thickness evolution during growth of stacked layers of InAs/InP(001) quantum wires studied by in situ stress measurements

  • David Fuster (a1), María Ujué González (a1), Luisa González (a1), Yolanda González (a1), Teresa Ben (a2), Arturo Ponce (a2) and Sergio I. Molina (a2)...

Abstract

Size and spatial distribution homogeneity of nanostructures is greatly improved by making stacks of nanostructures separated by thin spacers. In this work we present in situ and in real time stress measurements and reflection high energy electron diffraction (RHEED) observations and ex situ transmission electron microscopy (TEM) characterization of stacked layers of InAs quantum wires (QWr) separated by InP spacer layers, d(InP), of thickness between 3 and 20 nm. For d(InP) < 20 nm, the amount of InAs involved in the newly created QWr from the 2nd stack layer on, exceeds that provided by the In cell. Our results suggest that in those cases InAs 3D islands formation starts at the P/As switching and lasts during further InAs deposition. We propose an explanation for this process that is strongly supported on TEM observations. The results obtained in this work imply that concepts like the existence of a critical thickness for 2D-3D growth mode transition should be revised in correlated QWr stacks of layers.

Copyright

References

Hide All
1. Xie, Q., Madhukar, A., Chen, P. and Kobayashi, N. P., Phys. Rev. Lett. 75, 2542 (1995).
2. Tersoff, J., Teichert, C. and Lagally, M. G., Phys. Rev. Lett. 76, 1675 (1996).
3. Lita, B., Goldman, R. S., Philips, J. D., Bhattacharya, P. K., Appl. Phys. Lett. 74, 2824 (1999).
4. Alén, B., Martinez-Pastor, J., González, L., García, J. M., Molina, S. I., Ponce, A. and García, R., Phys. Rev. B 65, 241301 (2002).
5. González, L., García, J. M., García, R., Briones, F., Martínez-Pastor, J. and Ballesteros, C., Appl. Phys. Lett. 76, 1104 (2000).
6. Alén, B., Martínez-Pastor, J. García-Cristóbal, A., González, L. and García-Cristóbal, J. M., González, L. and García, J. M., Appl. Phys. Lett. 78 4025 (2001).
7. Mu, X., Zotova, I. B., Ding, Y. J., Yang, H. and Salamo, G. J., Appl. Phys. Lett. 79, 1091 (2001).
8. González, M U., González, Y. and González, L., Appl. Phys. Lett. 81, 4162 (2002).
9. González, M. U., González, L., García, J. M., González, Y., Silveira, J. P., Briones, F., Microelectronics Journal 35, 13 (2004).
10. Nakata, Y., Sugiyama, Y., Futatsugi, T., Yokoyama, N., J. Cryst. Growth 175/176, 713 (1997).
11. García, J. M., González, L., González, M. U., Silveira, J. P., González, Y., and Briones, F., J. Cryst. Growth 227–228, 975 (2001).
12. Gutiérrez, H. R., Cotta, M. A., Bortoleto, J. R. R., De Carvalho, M. M. G., J. Appl. Phys., 92, 7523 (2002).
13. Wang, , Zhao, F., Peng, Y., Jin, Z., Li, Y., Liu, S., Appl. Phys. Lett. 72, 2433 (1998).
14. Yoon, S., Moon, Y., Lee, T., Yoon, E., Appl. Phys. Lett., 74, 2029 (1999)
15. Yang, H., Ballet, P., Salamo, G. J., J. Appl. Phys. 89, 7871 (2001).
16. González, M. U., García, J. M., González, L., Silveira, J. P., González, Y., Gómez, J. D. and Briones, F.. Appl. Surf. Science 188, 188192 (2002).

Size and critical thickness evolution during growth of stacked layers of InAs/InP(001) quantum wires studied by in situ stress measurements

  • David Fuster (a1), María Ujué González (a1), Luisa González (a1), Yolanda González (a1), Teresa Ben (a2), Arturo Ponce (a2) and Sergio I. Molina (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed