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Si/SiGe Nanostructures Fabricated by Atomic Force Microscopy Oxidation

Published online by Cambridge University Press:  15 March 2011

Xiang-Zheng Bo ,
Leonid P. Rokhinson ,
Haizhou Yin ,
D. C. Tsui  and
J. C. Sturm
Xiang-Zheng Bo
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering Princeton University, NJ 08544, USA, Email: boxz@princeton.edu
Leonid P. Rokhinson
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering Princeton University, NJ 08544, USA, Email: boxz@princeton.edu
Haizhou Yin
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering Princeton University, NJ 08544, USA, Email: boxz@princeton.edu
D. C. Tsui
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering Princeton University, NJ 08544, USA, Email: boxz@princeton.edu
J. C. Sturm
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering Princeton University, NJ 08544, USA, Email: boxz@princeton.edu
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Abstract

In this work, local AFM oxidation technique in a controlled humidity environment has been used to create small features in strained SiGe alloys. When directly oxidizing SiGe alloys, minimum line widths of 20nm were achieved by adjusting parameters such as the bias voltage on the microscope tip and the tip writing speed. It was found that when bias voltage increases, and/or when the tip writing speed decreases, the oxidation height of silicon-germanium increases. In contrast to conventional thermal oxidation, the oxide height on SiGe alloys is slightly less than that on Si. Finally, this method was used to successfully cut conducting SiGe quantum well lines with high resolution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A6.5
Copyright
Copyright © Materials Research Society 2002

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References

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