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Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization

  • Barry D. van Dijk (a1), Paul Ch. Van der Wilt (a2), G. J. Bertens (a2), Lis.K. Nanver (a2) and Ryoichi Ishihara (a2)...

Abstract

Thin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.

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