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Single-Crystal Si Films Via a Low-Substrate-Temperature Excimer-Laser Crystallization Method

Published online by Cambridge University Press:  15 February 2011

Robert S. Sposili ,
M. A. Crowder  and
James S. Im
Robert S. Sposili
Affiliation:
Columbia University, Department of Chemical Engineering, Materials Science, and Mining Engineering, New York, NY 10027
M. A. Crowder
Affiliation:
Columbia University, Department of Chemical Engineering, Materials Science, and Mining Engineering, New York, NY 10027
James S. Im
Affiliation:
Columbia University, Department of Chemical Engineering, Materials Science, and Mining Engineering, New York, NY 10027
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Abstract

This paper describes an extension of the sequential lateral solidification (SLS) method for producing single-crystal Si regions in predetermined locations on thin Si films on SiO2. This is accomplished by manipulating the shape of the solidification front in order to exploit the tendency of grain boundaries to propagate nearly perpendicular to the melt interface. Specifically, we employ a chevron-shaped beamlet to select and grow the grain at the chevron's apex for propagation, resulting in a well-defined single-crystal region. Many such chevrons are processed concurrently—each one leading to a single-crystal region at a precisely determined location, and each one being large enough for complete inclusion of an entire thin-film transistor (TFT) device. Microstructural examination of defect-etched SLS material using optical microscopy reveals unambiguously that single-crystal regions free of high-angle grain boundaries are produced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 953
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Kazmerski, L. L., Polysilicon and Amorphous Thin Film Devices (Academic, New York, 1980).Google Scholar
2.Johnson, R. I., Anderson, G. B., Boyce, J. B., Fork, D. K., Mei, P., Ready, S. E., and Chen, S., Mater. Res. Soc. Symp. Proc. 297, 657 (1993).Google Scholar
3.Im, James S. and Sposili, Robert S., Mater. Res. Soc. Bull. 21 (3)39 (1996).Google Scholar
4.Sposili, Robert S. and Im, James S., Appl. Phys. Lett. 69, 2864 (1996).Google Scholar
5.Im, James S., Kim, H. J., and Thompson, Michael O., Appl. Phys. Lett. 63, 1969 (1993).Google Scholar
6.Im, James S. and Kim, H. J., Appl. Phys. Lett. 64, 2303 (1994).Google Scholar
7.Chalmers, Bruce, Principles of Solidification (Wiley, New York, 1964).Google Scholar
8.Givargizov, E. I., Oriented Crystallization on Amorphous Substrates (Plenum, New York, 1991).Google Scholar
9.Kamins, T. I., Polycrystalline Silicon for Inter grated Circuit Applications (Kluwer Academic, Boston, 1988).Google Scholar
10.Kim, H. J. and Im, James S., Mater. Res. Soc. Symp. Proc. 397, 401 (1995).Google Scholar