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Single Photon Laser Ionization as an In-Situ Diagnostic for MBE Growth

Published online by Cambridge University Press:  22 February 2011

April L. Alstrin ,
Adina K. Kunz ,
Paul G. Strupp  and
Stephen R. Leone
April L. Alstrin
Affiliation:
Joint Institute for Laboratory Astrophysics, National Institute of Standards and Technology and University of Colorado; Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0440
Adina K. Kunz
Affiliation:
Joint Institute for Laboratory Astrophysics, National Institute of Standards and Technology and University of Colorado; Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0440
Paul G. Strupp
Affiliation:
NRC-NIST postdoctoral fellow, present address Rocky Mountain Magnetics, Louisville, Colorado 80028-8188
Stephen R. Leone
Affiliation:
Staff Member, Quantum Physics Division, National Institute of Standards and Technology
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Abstract

Single photon laser ionization time-of-flight mass spectroscopy (SPI-TOFMS) is used to monitor the gaseous fluxes of Ga and Asn, during molecular beam epitaxy of GaAs. This noninvasive and real-time probe measures densities, and hence fluxes, of multiple chemical species impinging on or scattered from a substrate during conventional MBE. With single photon ionization at 118 nm (10.5 eV, ninth harmonic of Nd:YAG laser), the photon energy is large enough to ionize the species, but insufficient to both ionize and fragment. The lack of molecular dissociation of As2 and As4 greatly simplifies the interpretation of mass spectra. Additionally, the geometry of the single photon ionization TOFMS permits simultaneous film growth monitoring using RHEED. Results will be presented on the probing of scattering and desorption of III-V MBE species during GaAs growth. This technique promises to be a valuable in-situ diagnostic for III-V and II-VI MBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 359
Copyright
Copyright © Materials Research Society 1994

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