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Single Crystal Wurtzitic Aluminum Nitride Growth on Silicon Using Supersonic Gas Jets

Published online by Cambridge University Press:  21 February 2011

S. A. Ustin ,
L. Lauhon ,
K. A. Brown ,
D. Q. Hu  and
W. Ho
S. A. Ustin
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science Center, Cornell University, Ithaca, New York 14853
L. Lauhon
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science Center, Cornell University, Ithaca, New York 14853
K. A. Brown
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science Center, Cornell University, Ithaca, New York 14853
D. Q. Hu
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science Center, Cornell University, Ithaca, New York 14853
W. Ho
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science Center, Cornell University, Ithaca, New York 14853
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Abstract

Highly oriented aluminum nitride (0001) films have been grown on Si(001) and Si (111) substrates at temperatures between 550° C and 775° C with dual supersonic molecular beam sources. Triethylaluminum (TEA;[(C2H5)3Al]) and ammonia (NH3) were used as precursors. Hydrogen, helium, and nitrogen were used as seeding gases for the precursors, providing a wide range of possible kinetic energies for the supersonic beams due to the disparate masses of the seed gases. Growth rates of AIN were found to depend strongly on the substrate orientation and the kinetic energy of the incident precursor; a significant increase in growth rate is seen when seeding in hydrogen or helium as opposed to nitrogen. Growth rates were 2–3 times greater on Si(001) than on Si(111). Structural characterization of the films was done by reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD). X-ray rocking curve (XRC) full-width half-maxima (FWHM) were seen as small as 2.5°. Rutherford back scattering (RBS) was used to determine the thickness of the films and their chemical composition. Films were shown to be nitrogen rich, deviating from perfect stoichiometry by 10%–20%. Surface analysis was performed by Auger electron spectroscopy (AES).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 319
Copyright
Copyright © Materials Research Society 1996

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References

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