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Simultaneous Planarized Selective-Area Epitaxy of GaxIn1-xAs in Normal and Dove-tail Etched Grooves

  • H.M. Cox (a1), DM. Hwang (a1), M.R. Frei (a1), C. Caneau (a1), M. Grundmann (a2) and D. Bimberg (a2)...

Abstract

Selective-area epitaxy was investigated by Cl-transport VPE growth of GaxIn1-xAs in features etched in a (001) InP wafer through windows of an SiCO2 mask. Growth was conducted simultaneously on masked samples with grooves oriented along the [110] and the [110] directions and a planar InP wafer oriented 3° off (001). The structures were studied with optical and cross-sectional transmission electron microscopy (TEM), X-ray diffraction, photoluminescence (PL), and cathodoluminescence (CL). Excellent surface morphology, luminescence, and near-lattice-matching were simultaneously achieved for all samples. TEM cross-sections demonstrate that the [110] and even the [110] dove-tail grooves are filled in a wellordered manner without visible defects or undue strain. CL imaging in crosssection and planview demonstrates the trend in both samples for lower bandgap material to be found in the upper center portion of the groove.

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Simultaneous Planarized Selective-Area Epitaxy of GaxIn1-xAs in Normal and Dove-tail Etched Grooves

  • H.M. Cox (a1), DM. Hwang (a1), M.R. Frei (a1), C. Caneau (a1), M. Grundmann (a2) and D. Bimberg (a2)...

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