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Simultaneous Implant Activation and Isolation Formation in GaAs in a Single High-Temperature Anneal

  • Kei-Yu Ko (a1), S. Chen (a1), G. Braunstein (a1), L.-R. Zheng (a1) and S.-T. Lee (a1)...

Abstract

Using void-related compensation in Al-implanted GaAs, high-resistivity isolation regions that are thermally stable to high temperatures (> 700 °C) are demonstrated. The high-temperature thermal stability of the isolation regions allows the simplification of device processing in which a single high-temperature anneal (e.g., at 900 °C) can be used to activate the implant dopants in the device-active regions, and simultaneously to convert the Al-implanted regions highly resistive for electrical isolation. Other advantages of using void-related isolation will also be discussed.

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Simultaneous Implant Activation and Isolation Formation in GaAs in a Single High-Temperature Anneal

  • Kei-Yu Ko (a1), S. Chen (a1), G. Braunstein (a1), L.-R. Zheng (a1) and S.-T. Lee (a1)...

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