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Simulations of Low-Energy Ion/Surface Interaction Effects During Epitaxial Film Growth.

Published online by Cambridge University Press:  16 February 2011

Makoto Kitabatake  and
J. E. Greene
Makoto Kitabatake
Affiliation:
Central Research Laboratories, Matsushita Electric Ind., Moriguchi, Osaka 570, Japan.
J. E. Greene
Affiliation:
Department of Materials Science and The Coordinated Science Laboratory, University of Illinois, 1101 W. Springfield, Urbana, IL 61801, USA.
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Abstract

Molecular dynamics simulations were used to follow low-energy ion/surface interactions including kinetic energy redistribution in the lattice as a function of time, projectile and lattice atom trajectories, and the nature, number, and depth of residual defects. The simulations were carried out using the Tersoff many-body potential for Si. Irradiation events were initiated with 10 and 50 eV Si atoms incident normal to the Si(001)2×l surface at an array of points in the primitive surface unit cell. Ion-induced epitaxial growth was observed due to both Si projectiles and Si lattice atoms coming to rest at epitaxial positions through direct deposition as well as site exchange occurring via diffusional and collisional processes. 36 simulations of 10 eV (50 eV) Si bombardment resulted in an average stopping position of 0.5 Å (1.6 Å) below the surface, 10 (13) epitaxial events, 7 (24) exchange events between the projectile and a lattice atom, and the formation of 15 (63) interstitials and 0 (36) vacancies. The interstitials preferentially diffuse toward the surface and are annealed out over times corresponding to monolayer deposition at typical Si MBE growth temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 9
Copyright
Copyright © Materials Research Society 1991

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References

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