Hostname: page-component-77c89778f8-gvh9x Total loading time: 0 Render date: 2024-07-21T22:40:02.088Z Has data issue: false hasContentIssue false
  • English
  • Français

Simulation Design and Device Characteristics of AlAs/GaAs/AlAs Resonant Tunneling Structures with a GalnAs Emitter Spacer Layer

Published online by Cambridge University Press:  26 February 2011

Y. W. Choi ,
H. M. Kim  and
C. R. Wie
Y. W. Choi
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering and III-V Semiconductor Materials and Devices Laboratory, Bonner Hall, Buffalo, New York 14260
H. M. Kim
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering and III-V Semiconductor Materials and Devices Laboratory, Bonner Hall, Buffalo, New York 14260
C. R. Wie
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering and III-V Semiconductor Materials and Devices Laboratory, Bonner Hall, Buffalo, New York 14260
Get access

Abstract

Electrical and structural investigation of AlAs/GaAs/AlAs resonant tunneling structures with pseudomorphic strained Ga1−xInxAs (x=0, 0.05, 0.1, 0.15, and 0.2) emitter spacer layer are presented. As indium composition increased, the peak current density, peak voltage, and peak to valley ratio increased. For a theoretical understanding of these increases, a self-consistent simulation was employed. In the simulation, we treated the 2-dimensional electrons confined in the low energy bandgap GalnAs emitter spacer well as pseudo-3-dimensional electrons, distributed continuously down to the emitter launching energy. In the simulation, we used the bottom energy of the pseudo-3-dimensional electrons to be ⅔δEc below the emitter conduction band edge. Using the above values, an excellent agreement of peak current density and peak voltage between the experiment and the simulation was achieved. Also, for structural identification, standard double crystal x-ray rocking curve technique has been used. From the interference analysis of the x-ray results, we could obtain the indium composition times thickness product.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 627
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Broekaert, T. P. E., Lee, W., and Fonstad, C. G.. Appl. Phys. Lett, 53:1545, 1988.Google Scholar
[2] Kapre, R., Mudhukar, A., Kaviani, K., Guha, S., and Rajkumar, K. C.. Appl. Phys. Lett., 56:922, 1990.Google Scholar
[3] Wie, C. R. and Choi, Y. W.. Appl. Phys. Lett., 58: 1077, 1991.Google Scholar
[4] Wie, C. R., Chen, J. C., Kim, H. M., Liu, P. L., Choi, Y. W., and Hwang, D. M.. Appl. Phys. Lett., 55: 1774, 1989.Google Scholar
[5] Mounaix, P., Vanbesien, O., and Lippens, D.. Appl. Phys. Lett., 57: 1517, 1990.Google Scholar
[6] Jogai, B., Huang, C. I., Koenig, E. T., and Bozada, C. A.. J. Vac. Sci. Technol., B9: 143, 1991.Google Scholar
[7] Choi, Y. W. and Wie, C. R.. accepted to be published in J. Appl. Phys., 1991.Google Scholar
[8] Wolak, E., Özbay, E., Park, B. G., Diamond, S. K., Bloom, D. M., and Harris, J. S. Jr,. J. Appl. Phys., 69: 3345, 1991.Google Scholar
[9] Ricco, B. and Ya, M.. Azbel. Phys. Rev., B29: 1970, 1984.Google Scholar
[10] Tsuchiya, M., Sakaki, H., and Yoshino, J.. Jpn. J. Appl. Phys., L24: 466, 1985.Google Scholar