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A Sims Study of Electroluminescent Phosphors: SrS:Cu

Published online by Cambridge University Press:  10 February 2011

Lily H. Zhang
Affiliation:
Charles Evans & Associates, 301 Chesapeake Dr., Redwood City, CA 94063, lzhang@cea.com
Larry Wang
Affiliation:
Charles Evans & Associates, 301 Chesapeake Dr., Redwood City, CA 94063, lzhang@cea.com
Wusheng Tong
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, GA 30332
YongBao Xin
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, GA 30332
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Abstract

This study has used secondary ion mass spectrometry (SIMS) as a technique for thin film EL material characterization. It has shown that the Cu dopant concentration in the SrS films directly correlates with the luminescent brightness of the EL devices. A series of SrS:Cu,Y were grown using MBE to study the Y co-doping effects. It has been found that Y peak concentration and areal density in the SrS increased as the Y evaporation cell temperature was increased. The maximum PL intensity was found in the sample grown in the middle of the Y cell temperature range used. The Y co-doping has shown to reduce the thermal quenching effects in SrS EL devices. Therefore, in this series of samples, a good correlation has been found between Y and Cu concentration and the EL device performance characteristics.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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