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SIMS Determination of MG+ and AS+ Range Profiles in Photoresist and Polyimide Implant Masks.

Published online by Cambridge University Press:  21 February 2011

D. L. Dugger ,
M. B. Stern  and
T. M. Rubico
D. L. Dugger
Affiliation:
GTE Laboratories, Incorporated, Waltham, MA 02254
M. B. Stern
Affiliation:
GTE Laboratories, Incorporated, Waltham, MA 02254
T. M. Rubico
Affiliation:
GTE Laboratories, Incorporated, Waltham, MA 02254
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Abstract

The distribution of Mg+ (a p-type dopant for GaAs) and As+ (an p-type dopant for Si) implanted into both photoresist (PR) and polyimide (PI) have been determined experimentally. Range data of Mg ions at 200 keV and 300 keV and As ions at 150 keV have been measured by Secondary Ion Mass Spectroscopy (SIMS). SIMS values for the projected range Rp and the standard deviation ARp were compared to range profile data calculated using the Projected Range Algorithm (PRAL) of Biersack [1] as well as the standard LSS theory [2]. While the values for Rp calculated from the PRAL model generally agreed within 10% of the SIMS values, the calculations underestimated Rp for PR but were in good agreement for PI. The LSS calculations underestimated Rp in both materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 385
Copyright
Copyright © Materials Research Society 1989

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References

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