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A Simple, Non-Destructive Optical Technique to Characterize Ion-Implanted Semiconductor Wafers

  • Jeff F. Young (a1), H. R. Jensen (a1) and Martine Simard-Normandin (a2)

Abstract

A simple, non-destructive technique to characterize the properties of ion-implanted semiconductor wafers is described. The method consists of measuring the infrared attenuated total reflection (ATR) spectrum of the implanted layer/air interface and fitting it with a calculated spectrum which takes account of the free carrier density profile and any possible residual damage and/or amorphization. The results obtained on boron and implanted Si wafers, annealed at different temperatures in a rapid thermal annealer, are compared with their respective SIMS profiles.

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A Simple, Non-Destructive Optical Technique to Characterize Ion-Implanted Semiconductor Wafers

  • Jeff F. Young (a1), H. R. Jensen (a1) and Martine Simard-Normandin (a2)

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