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Silicon-Sapphire Interface: A High Resolution Electron Microscopy Study

Published online by Cambridge University Press:  15 February 2011

Fernando A. Ponce
Fernando A. Ponce*
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, California, USA
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Abstract

The structure of the silicon-sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied in crøss section by high resolution transmission electron microscopy. Multibeam images of the interface region have been obtained where both the silicon and sapphire lattices are directly resolved. The interface is observed to be planar and abrupt to the instrument resolution limit of 3 Å. No interfacial phase is evident. Defects are inhomogeneously distributed at the interface: relatively defect-free regions are observed in the silicon layer in addition to regions with high concentration of defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 285
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Heiman, F. P., Appl. Phys. Lett. 11, 132 (1967).CrossRefGoogle Scholar
2. Kühl, Ch., Schlötterer, H. and Schwidefsky, F., J. Electrochem. Soc. 123, 97 (1976).CrossRefGoogle Scholar
3. Schlötterer, H., J. Vac. Sci. Technol. 13, 29 (1976).CrossRefGoogle Scholar
4. Mercier, J., J. Electrochem. Soc. 118, 962 (1971).CrossRefGoogle Scholar
5. Cullen, G. W., Corboy, J.F. and Smith, R.T., J. Crystal Growth 31, 274 (1975).CrossRefGoogle Scholar
6. Trilhe, J., Borel, J. and Duchemin, J. P., J. Crystal Growth 45, 439 (1978).CrossRefGoogle Scholar
7. Abrahams, M. S. and Buiocchi, C. J., Appl. Phys. Lett. 27, 325 (1975).CrossRefGoogle Scholar
8. Hayashi, T. and Kurosawa, S., J. Crystal Growth 45, 426 (1979).CrossRefGoogle Scholar
9. Ham, W. E., Abrahams, M. S., Buiocchi, C. J. and Blanc, J., J. Electrochem. Soc. 124, 634 (1977).CrossRefGoogle Scholar
10. Ponce, F. A., Yamashita, T., Sinclair, R., Proc. 38th Annual Meeting EMSA (San Francisco, 1980), 320.Google Scholar
11. Kronberg, M. L., Acta Met. 5, 507 (1957).CrossRefGoogle Scholar
12. Lihl, R., Oppolzer, H., Pongratz, R., Skalicky, P. and Sranda, W., J. Microscopy 118, 89 (1980).Google Scholar
13. Olson, G. B. and Cohen, M., Acta Met. 27, 1907 (1979).CrossRefGoogle Scholar
14. Kohn, J. A., The American Mineralogist 48, 263 (1958).Google Scholar