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Silicon-Framed Tensile Specimens: Techniques and Results

Published online by Cambridge University Press:  10 February 2011

D. T. Read*
Affiliation:
Materials Reliability Division, National Institute of Standards and Technology, Boulder, CO 80303-3328
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Abstract

The silicon-framed tensile specimen design has been used in tensile tests of thin films of a variety of metals and epitaxial silicon. A piezo-actuated microtensile test device holds the specimen while the silicon frame is cut just before testing, imposes the tensile displacement, and provides voltages proportional to force and displacement. This technique is appropriate for films that are hundreds of micrometers long, tens to a few hundred micrometers wide, and from 0.3 to 15 micrometers thick. The specimen film must be amenable to lithographic patterning, must adhere well to the silicon substrate, and must resist a silicon etchant. The specimen fabrication is a bulk-micromachining process, because the silicon substrate is etched through underneath the specimen film. Uniaxial yield strength, ultimate tensile strength, and elongation to maximum load can be measured using the microtensile tester. The addition of laser illumination and digital photography allows implementation of electronic speckle pattern interferometry, for accurate measurement of local displacement. This addition allows evaluation of the tensile Young's modulus. Compared to bulk material, thin films of copper and aluminum have lower apparent Young's moduli, higher yield and ultimate tensile strengths because of their fine grain size, and lower elongation to failure. Correlation between properties measured by indentation and by tensile testing needs further study.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1 Hardwick, D. A., Thin Solid Films 154, 109124 (1987).Google Scholar
2 Alexopoulos, P. S. and O'Sullivan, T. C., Annual Review of Materials Science 20, 391420 (1990).Google Scholar
3 Brotzen, F. R., International Materials Reviews 39, 2445 (1994).Google Scholar
4 Schweitz, J.-A., Materials Research Society Bulletin 17, 3445 (1992).Google Scholar
5 Fartash, A., Schuller, I. K. andGrimsditch, M., Review of Scientific Instruments 62, 494501 (1991).Google Scholar
6 Ruud, J. A., Josell, D., Spaepen, F., and Greer, A. L., Journal of Materials Research 8, 112117 (1993).Google Scholar
7 Small, M. K., Daniels, B. J., Clemens, B. B., and Nix, W. D., Journal of Materials Research 9, 2530 (1994).Google Scholar
8 Kim, I. andWeil, R., Thin Solid Films 169, 3542 (1993).Google Scholar
9 Ding, X., Ko, W. H., andMansour, J. M., Sensors andActuators A23, 866871 (1990).Google Scholar
10 Read, D. T. andDaily, J. W., Journal of Materials Research 8, 15421549 (1993).Google Scholar
11 Davis, B. M., Seidman, D. N., Moreau, A., Ketterson, J. B., Mattson, J., andGrimsditch, M., Physical Review B43, 93049307 (1991).Google Scholar
12 Jones, R. andWykes, C., Holographic and Speckle Interferometry, Cambridge University Press, 1989.Google Scholar
13 Sirohi, R. S., Speckle Metrology, Marcel Dekker, New York, 1993.Google Scholar
14 Edf, R. K., Speckle Metrology, Academic Press, New York, 1978.Google Scholar
15 Dainty, J. C., Laser Speckle and Related Phenomena, Springer-Verlag, Berlin, 1984, pp. 203254.Google Scholar
16 Read, D. T., Measurement Science and Technology 9, 676685 (1998).Google Scholar
17 Simmons, G. and Wang, H., Single Crystal Elastic Constants and Calculated Aggregate Properties: A Handbook, M.I. T.Press, Cambridge, 1971.Google Scholar
18 Lin, K., Kim, I., and Weil, R., Plating and Surface Finishing, July, 1988, pp. 5256.Google Scholar
19 Read, D. T., Tensile Testing of Thin Films: Techniques and Results, National Institute of Standards and Technology, Gaithersburg, MD, Technical Note 1500-1, 1998.Google Scholar