Hostname: page-component-77c89778f8-5wvtr Total loading time: 0 Render date: 2024-07-17T12:03:01.112Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon-Carbon Random Alloy Epitaxy on Silicon by Rapid Thermal Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

J. Mi ,
P. Letourneau ,
J.-D. Ganière ,
M. Gamhanou ,
M. Dutoit ,
C. Dubois  and
J. C. Dupuy
J. Mi
Affiliation:
Swiss Federal Institute of Technology, Institute for Micro- and Optoelectronics, 1015 Lausanne, Switzerland
P. Letourneau
Affiliation:
Swiss Federal Institute of Technology, Institute for Micro- and Optoelectronics, 1015 Lausanne, Switzerland
J.-D. Ganière
Affiliation:
Swiss Federal Institute of Technology, Institute for Micro- and Optoelectronics, 1015 Lausanne, Switzerland
M. Gamhanou
Affiliation:
Swiss Federal Institute of Technology, Institute for Micro- and Optoelectronics, 1015 Lausanne, Switzerland
M. Dutoit
Affiliation:
Swiss Federal Institute of Technology, Institute for Micro- and Optoelectronics, 1015 Lausanne, Switzerland
C. Dubois
Affiliation:
Laboratoire de Physique de la Matière, INSA, 69621 Villeurbanne, France
J. C. Dupuy
Affiliation:
Laboratoire de Physique de la Matière, INSA, 69621 Villeurbanne, France
Get access

Abstract

We have grown dilute Si-C epitaxial layers on Si (100) substrates at 800°C with a RTCVD process using SiH4 and C3H8. C atoms can be kinetically stabilized in interstitial sites in the Si lattice at relatively high temperatures if process parameters, such as growth rate and C/Si flux ratio, are optimized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 255
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Jain, S. C. and Hayes, W., Semicond. Sci. Technol. 6, 547 (1991).Google Scholar
[2] Eberl, K., Iyer, S. S., Zollner, S., Tsang, J. C. and LeGoues, F. K., Appl. Phys. Lett. 60, 3033 (1992).Google Scholar
[3] Regolini, J. L., Gisbert, F., Dolino, G. and , Boucaud, Mater. Lett. 18, 57 (1993).Google Scholar
[4] Powell, A. R., Eberl, K., LeGoues, F. E., Ek, B. A. and Iyer, S. S., J. Vac. Sci. Technol. B 11, 1064 (1993).CrossRefGoogle Scholar
[5] Im, S., Washburm, J., Gronsky, R., Cheung, N. W. and Yu, K. m., Appl. Phys. Lett. 63, 929 (1993).CrossRefGoogle Scholar
[6] Mi, J., Letourneau, P., Ganière, J.-D., Gailhanou, M., Dutoit, M., Dubois, C., Dupuy, J. C. and Brémond, G., to be published in Helv. Phys. Acta. (1994).Google Scholar
[7] Strane, J. W., Stein, H. J., Lee, S. R. and Doyle, B. L., Picraux, S. T. and Mayer, J. W., Appl. Phys. Lett. 63, 2786 (1993).CrossRefGoogle Scholar
[8] Brémond, G., Souifi, A., Benyattou, T. and Dutartre, D., Thin Solid Films 222, 60 (1992).Google Scholar
[9] Posthill, J. B., Rudder, R. A., Hattangady, S. V., Fountain, G. G. and Markunas, R. J., Appl. Phys. Lett. 56, 734 (1990).CrossRefGoogle Scholar
[10] Ruddel, F. H., McNeill, D. W., Armstrong, B. M. and Gamble, H. S., Proc. ESSDERC'90, 357 (1990).Google Scholar
[11] Iyer, S. S., Eberl, K., Groorsky, M. S., LeGoues, F. K. and Tsang, J. C., Appl. Phys. Lett. 60, 356 (1992).Google Scholar