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Silicon Wafer Defect Self-Characterization with CCD Image Sensors

Published online by Cambridge University Press:  01 February 2011

William C. McColgin ,
Alexa M. Perryy ,
Dean J. Seidler  and
James P. Lavine
William C. McColgin
Affiliation:
Image Sensor Solutions, Eastman Kodak Company, Rochester, NY 14650-2008, U.S.A.
Alexa M. Perryy
Affiliation:
Image Sensor Solutions, Eastman Kodak Company, Rochester, NY 14650-2008, U.S.A.
Dean J. Seidler
Affiliation:
Image Sensor Solutions, Eastman Kodak Company, Rochester, NY 14650-2008, U.S.A.
James P. Lavine
Affiliation:
Image Sensor Solutions, Eastman Kodak Company, Rochester, NY 14650-2008, U.S.A.
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Abstract

Today's CCD image sensors can provide very high image quality. However, used as a tool, they can also provide a sensitive window into defects in silicon, either intrinsic to the starting wafers or introduced during fabrication. In this paper, we examine some cases of known silicon defects and show how they can appear in, and be studied by, CCD imagers. As examples, we discuss epi-layer defects, slip defects, and dark-current rings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E6.3
Copyright
Copyright © Materials Research Society 2005

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