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Silicon Thin Film Homoepitaxy by Rapid Thermal Atmospheric-Pressure Chemical Vapor Deposition (RT-APCVD)

Published online by Cambridge University Press:  10 February 2011

Rémi Monna ,
Detlef Angermeier ,
Abdelilah Slaoui  and
Jean Claude Muller
Rémi Monna
Affiliation:
Laboratory PHASE (UPR 292 CNRS), 23 rue du Loess, 67037 Strasbourg, FRANCE
Detlef Angermeier
Affiliation:
Laboratory PHASE (UPR 292 CNRS), 23 rue du Loess, 67037 Strasbourg, FRANCE
Abdelilah Slaoui
Affiliation:
Laboratory PHASE (UPR 292 CNRS), 23 rue du Loess, 67037 Strasbourg, FRANCE
Jean Claude Muller
Affiliation:
Laboratory PHASE (UPR 292 CNRS), 23 rue du Loess, 67037 Strasbourg, FRANCE
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Abstract

The homoepitaxy of thin film silicon layers in a horizontal, atmospheric pressure RTCVD reactor is reported. The experiments were conducted in a temperature range from 900°C to 1300°C employing the precursor trichlorosilane (TCS) and the dopant trichloroborine (TCB) diluted in hydrogen. The epilayers were evaluated by Nomarski microscopy, Rutherford backscattering spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the thin film were analyzed by sheet resistance and four point probe characterization methods. We propose that the responsible mechanisms for the observed growth decline at higher precursor concentration in hydrogen are due to the reaction of the gaseous HCI with the silicon surface and the supersaturation of silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 367
Copyright
Copyright © Materials Research Society 1996

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