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Silicon Surface Cleaning by A Plasma in Afterglow

Published online by Cambridge University Press:  25 February 2011

B. Charlet  and
L. Peccoud
B. Charlet
Affiliation:
CEA, DTA, LETI, DMEL, CEN-Grenoble 85 X-F 38041 Grenoble Cedex
L. Peccoud
Affiliation:
CEA, DTA, LETI, DMEL, CEN-Grenoble 85 X-F 38041 Grenoble Cedex
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Abstract

Microwave plasma surface cleaning opens an interesting possibility for thin layer preparation. We have investigated the effect of hydrogen and NF3 plasma induced by a microwave source. The sample is exposed in the downstream region achieved by a plenum. The cleaning process has been applied to a silicon (100) substrate. The cleaned surface has been analyzed by different methods of investigation: HRTEM, XPS, Therma-Wave and MOS capacitor (C-V) characteristics. The HRTEM observations show a defect-free interface, between the hydrogen cleaned silicon surface and the thermal oxide grown immediately after cleaning. In addition, the silicon crystalline network is not perturbed by induced defects. This was confirmed by Thermal Wave measurements which gave an excellent surface qualification.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 243
Copyright
Copyright © Materials Research Society 1992

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References

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