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Silicon Nanowires: Doping Dependent N- and P- Channel Fet Behavior

Published online by Cambridge University Press:  01 February 2011

Kumhyo Byon ,
John E. Fischer ,
Kofi W. Adu  and
Peter. C. Eklund
Kumhyo Byon
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, U.S.A.
John E. Fischer
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, U.S.A.
Kofi W. Adu
Affiliation:
Department of Physics, Pennsylvania State University, University Park, PA 16803, U.S.A.
Peter. C. Eklund
Affiliation:
Department of Physics, Pennsylvania State University, University Park, PA 16803, U.S.A.
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Abstract

The electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found p-channel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both n- and p-channel FET devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F9.9
Copyright
Copyright © Materials Research Society 2005

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References

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