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Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices

  • Michael O'Loughlin (a1), K. G. Irvine (a2), J. J. Sumakeris (a3), M. H. Armentrout (a4), B. A. Hull (a5), C. Hallin (a6) and A. A. Burk (a7)...

Abstract

The growth of thick silicon carbide (SiC) epitaxial layers for large-area, high-power devices is described. Horizontal hot-wall epitaxial reactors with a capacity of three, 3-inch wafers have been employed to grow over 350 epitaxial layers greater than 100 μm thick. Using this style reactor, very good doping and thickness uniformity and run-to-run reproducibility have been demonstrated. Through a combination of reactor design and process optimization we have been able to achieve the routine production of thick epitaxial layers with morphological defect densities of around 1 cm−2. The low defect density epitaxial layers in synergy with improved substrates and SiC device processing have resulted in the production of 10 A, 10 kV junction barrier Schottky (JBS) diodes with good yield (61.3%).

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7. Leonard, R., Khlebnikov, Y., Powell, A., Basceri, C., Brady, M., Khlebnikov, I., Jenny, J., Malta, D., Paisley, M., Tsvetkov, V., Zilli, R., Deyneka, E., Hobgood, H., and Carter, C., presented at the 2007 International Conference on Silicon Carbide and Related Materials, Otsu, Japan, 2007 (to be published).

Keywords

Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices

  • Michael O'Loughlin (a1), K. G. Irvine (a2), J. J. Sumakeris (a3), M. H. Armentrout (a4), B. A. Hull (a5), C. Hallin (a6) and A. A. Burk (a7)...

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