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Silicide Technology in Deep Submicron Regime

  • K Suguro (a1), T. Iinuma (a1), K Ohuchi (a2), K. Miyashita (a2), H. Akutsu (a1), H. Yoshimura (a2), Y. Akasaka (a1), K Nakajima (a1), K Miyano (a1) and Y. Toyoshima (a2)...

Abstract

Silicide technology using cobalt-titanium alloy has been developed for sub-quarter micron devices. Extremely flat and epitaxial CoSi2 films are successfully grown on a (100) Si substrate. Improved SALICIDE process is not influenced by native oxide on a Si surface. This technology will be very useful in deep sub-quarter micron devices.

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Silicide Technology in Deep Submicron Regime

  • K Suguro (a1), T. Iinuma (a1), K Ohuchi (a2), K. Miyashita (a2), H. Akutsu (a1), H. Yoshimura (a2), Y. Akasaka (a1), K Nakajima (a1), K Miyano (a1) and Y. Toyoshima (a2)...

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