Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-05-14T01:01:45.209Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicide Formation By High Dose Transition Metal Implants Into Si.

Published online by Cambridge University Press:  26 February 2011

F. H. Sanchez ,
F. Namavar ,
J. I. Budnick ,
A. Fasihudin  and
H. C. Hayden
F. H. Sanchez
Affiliation:
Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, CT 06268.
F. Namavar
Affiliation:
Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, CT 06268.
J. I. Budnick
Affiliation:
Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, CT 06268.
A. Fasihudin
Affiliation:
Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, CT 06268.
H. C. Hayden
Affiliation:
Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, CT 06268.
Get access

Abstract

We report preliminary results of a study on silicide formation by means of high dose transition metal implants into Si (100) single crystals.

100 keV Cr+, Fe+, Co+ and Ni+ were implanted at room temperature. For the Cr+, Fe+ and Ni+ implants, no silicide formation was observed after implantation. However, both Rutherford Backscattering Spectrometry (RBS) and X-Ray Diffraction (XRD) results clearly indicated the existence of CrSi2 after the Cr-Si samples were annealed 4 hours at 550°C. In the case of the Fe+ and Ni+ implants, FeSi2 and NiSi2 were identified by XRD after annealing the implanted samples half an hour at 400°C. A layer of CoSi of about 1000 Å was observed in the as implanted Co-Si samples by both RBS and XRD.

Ni+ ions accelerated to 150 keV were implanted at 350°C. A much broader distribution and higher retention of Ni was obtained in this case, showing evidence of long range atomic diffusion. NiSi and polycrystalline silicon were observed by XRD in the as implanted samples.

The possibility of high dose ion implantation as a suitable technique for producing transition metal silicides is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 439
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Murarka, S.P., Silicides for VLSI Applications, Academic Press, New York, 1983.Google Scholar
2. Liau, Z.L. and Mayer, J.W., J. Vac. Sci. Technol., 15, 1629 (1978).CrossRefGoogle Scholar
3. Namavar, F., Budnick, J.I., Hayden, H.C., Otter, F.A. and Patarini, V., Mat. Res. Soc. Symp. Proc. 27, 341 (1984).CrossRefGoogle Scholar
4. Namavar, F., Budnick, J.I., Sanchez, F.H. and Otter, F.A., Nucl. Instr. Meth. Phys. Res. B7/8, 357 (1985).CrossRefGoogle Scholar
5. Tu, K.N. and Mayer, J.W. in Thin Films-Interdiffusion and Reactions (Poate, J.M., Tu, K.N. and Mayer, J.W., eds.) Wiley, New York, 1978, p.359.Google Scholar
6. Tu, K.N., Alessandrini, E., Chu, W.K., Krautle, H. and Mayer, J., Jpn. J. Appl. Ptys. Suppl.2, Pt.1, 669 (1974).Google Scholar
7. Lau, S.S., Feng, J.S.-Y., Olowolafe, J.O. and Nicolet, M.-A., Thin Solid Films, 25, 415 (1975).Google Scholar