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SiGe/Si-Bipolar and Quantum Well Transistors, Results and Prospects

Published online by Cambridge University Press:  25 February 2011

ULF KÖNIG
ULF KÖNIG*
Affiliation:
Daimler-Benz AG, Research Center Ulm, Wilhelm-Runge Str. 11, D-7900 Ulm, Germany
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Abstract

The quality of SiGe/Si heterodevices recently could be improved by depositing on a SiGe buffer with a Ge grading. In house MBE grown structures reached 1.5 K mobilities of 173000 cm2/Vs. Also at room temperature (RT) the mobility is up to 4 times higher than in bulk Si or SiGe. HBTs in the discussed material system can exceed performances of conventional Si-homobipolar transistors, already with relaxed design rules. I briefly review on mesa - like SiGe HBTs with high fmax and fT around 50 GHz, owing to low base sheet resistances <1Kω□. In DC-operation high gains >400 or 13 000 at RT or 77K were obtained, n - and p - channel Si, SiGe and Ge MODFETs will be presented in more detail, n- MODFETs exhibit high transconductances above 300 mS/mm at RT and almost 1000 mS/mm at 77K. Different effects will be discussed, e.g. the influence of the gate to channel distance and effects of rapid thermal activation. Si/Ge heterosystems offer exclusive properties, e.g. the same mobility in a Si - 2DEG and a Ge - 2DHG. Complementary MODFETs (CMOD) can be envisaged. Furtheron the Si/Ge system allows the monolithic integration of heterodevices with high complexity Si - ICs (heterointegration).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 387
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Kasper, E., and Schaffler, F. in Semiconductors and Semimetals 33, 223 (1991)Google Scholar
[2] Presting, H., Kibbel, H. et. al., Semicon. Sci Tec. 7, 1127 (1992)Google Scholar
[3] Patton, G.L., Iyer, S.S., Delage, S.L., Tiwari, S. et.al., IEEE -EDL 9, 165 (1988)Google Scholar
[4] Tatsumi, T., Hirayama, H., and Aiziki, N., Appl. Phys. Lett., 52, 895 (1988)Google Scholar
[5] Temkin, H., Bean, J., Antreasyan, A. et.al., Appl. Phys. Lett., 52, 1089 (1988)Google Scholar
[6] Kamins, T.I. et. al. IEEE-EDL 10, 503 (1989)Google Scholar
[7] Fischer, S.E. et. al., IEDM 89, 890 (1989)Google Scholar
[8] Patton, G.L. et. al., IEEE-EDL 11, 171 (1990)Google Scholar
[9] Burghartz, J.N. et. al., IEDM 90, 297 (1990)Google Scholar
[10] Norozny, P. and Köhlhoff, D., unpublished (1990)Google Scholar
[11] Schreiber, H.U-, DRC, 135 (1991)Google Scholar
[12] Cressler, J.D., IEDM 91, 861 (1991)Google Scholar
[13] Comfort, J.H. et. al., IEDM 91, 857 (1991)Google Scholar
[14] Schreiber, H.U., and Bosch, B.G., Electron Lett., 28, 485 (1992)Google Scholar
[15] Gruhle, A., Kibbel, H., Konig, U., Erben, U., and Kasper, E. IEEE-EDL 13, 206 (1992)Google Scholar
[16] Gruhle, A., Kibbel, H., and Kasper, E., DRC 92 (1992)Google Scholar
[17] Sato, F., Hashinoto, T., Tatsumi, T., Kitahata, H., and Tashito, T., IEDM 92, (1992)Google Scholar
[18] Harame, D. et. al., IEDM 92, (1992)Google Scholar
[19] Gruhle, A., AVS-Meeting, Chicago (1992), to be publ. in J. Vac. Sci. Tec.Google Scholar
[20] Chen, J., Gao, G.B., and Morkoc, H., DRC 92, 147 (1991)Google Scholar
[21] Marksteiner, S., Felder, A., and Meister, T.F., Microel. Engineering 19, 535 (1992)Google Scholar
[22] Dämbkes, H., Herzog, H.J., Jorke, H., Kibbel, H., and Kasper, E., IEDM 85, 768, (1985)Google Scholar
[23] König, U., and Schäffler, F., Electron. Lett., 27, 1405 (1991)Google Scholar
[24] Schäffler, F., Mat. Res. Soc. Symp. Proa, 220, 433 (1991)Google Scholar
[25] Ismail, K., Meyerson, B. S., Risthon, S., Chu, J., et. al., IEEE-EDL 13, 229 (1992)Google Scholar
[26] König, U., Boers, A.J., Schäffler, F., and Kasper, E., Electron Lett. 28, 160 (1992)Google Scholar
[27] König, U., and Schäffler, F. unpublishedGoogle Scholar
[28] Pearsall, T.P., Bean, J.C., People, R. et al., Pro. 1 Int. Symp. Si-MBE, 400 (1985)Google Scholar
[29] Pearshall, T.P., and Bean, J.C., IEEE-EDL 7, 308 (1986)Google Scholar
[30] König, U., and Schäffler, F., submitted to IEEE EDLGoogle Scholar
[31] König, U., and Schäkffler, F., submitted Electron. Lett.Google Scholar
[32] Murakami, F., Nakayawa, K., Nishida, A., and Miyao, M., IEEE-EDL 12, 71 (1991)Google Scholar
[33] Nayak, D.K., Woo, J.C.S., Park, J.S., Wang, K. L., et al., IEEE-EDL 12, 154 (1991)Google Scholar
[34] Fountain, G.G. et. al., DRC 91, 139 (1991)Google Scholar
[35] Kesan, V.P. et. al., Mat. Res. Soc. Symp. Proc., 220, 471 (1991)Google Scholar
[36] Kesan, V.P. et. al., IEDM 91 (1991)Google Scholar
[37] De La. Houssaye, P.R. et. al., IEEE-EDL 9, 148 (1988)Google Scholar
[38] Luryi, S. in High Speed Sem. Dev., J. Wiley + S., New York, (1990)Google Scholar
[39] Cappy, A. et. al., IEEE Trans.-El. Dev., ED 27, 2158 (1980)Google Scholar
[40] Kasper, E. in Advances in Sol. State Phys. 27, 265 (1987)Google Scholar
[41] König, U., Kibbel, H. and Kasper, E., EMC (1991)Google Scholar
[42] King, C.A et. al., IEEE-EDL 10, 52 (1989)Google Scholar
[43] Narozny, P. et. al., Proc. ESSDERC 477 (1990)Google Scholar
[44] Prinz, E.J., Garone, P.M., Schwartz, P.V., Xiao, X. et al., IEEE-EDL 12, 42 1991 Google Scholar
[45] Gruhle, A., Kibbel, H., and Kasper, E., Microelectronic Engineering 19, 435 (1992)Google Scholar
[46] Jorke, H., and Kibbel, H., J. Electroch. Soc. 133, 774 (1986)Google Scholar
[47] Jorke, H., Surf. Sci. 193, 569 (1988)Google Scholar
[48] Jorke, H., and Herzog, H.J., J. Appl. Phys. 60, 1735 (1986)Google Scholar
[49] Schreiber, H.U., and Bosch, B.G., IEDM 89, 643 (1989)Google Scholar
[50] Kasper, E., Kibbel, H. and König, U., Mat. Res. Soc. Symp. Proc. 220, 451 (1991)Google Scholar
[51] Fitzgerald, E.A. et. al., Appl. Phys. Lett. 59, 811 (1991)Google Scholar
[52] Schäffler, F., Többen, D., Herzog, H.J., et. al., Semic. Sci. Tec. 7, 260 (1992)Google Scholar
[53] König, U. in Advances in Sol. State Phys. 32, 199 (1992)Google Scholar
[54] Schälffler, F., and König, U., to be published in Springer Proc., (1992)Google Scholar
[55] Schäfler, F., and Jorke, H., Appl. Phys. Lett. 58, 397 (1991)Google Scholar
[56] König, U., Boers, A. J., and Schäffler, F., accepted for IEEE-EDLGoogle Scholar
[57] Das, M.B., Kopp, W., and Morkoc, H., IEEE-EDL 5, 446 (1984)Google Scholar
[58] Dickmann, J., Heedt, C.H., and Dämbkes, H., IEEE Transc. El. Dev., 36, 2315 (1989)Google Scholar
[59] Ismail, K., to be published in Springer Proc. (1992)Google Scholar
[60] Schäffler, F., unpublishedGoogle Scholar
[61] Ohuchi, N. et al., IEDM 83, 3–3 (1983)Google Scholar
[62] Konaka, S. et. al., Ext. Abstr. 16th Int. Conf. Sol. State Dev. Mat. 209 (1984)Google Scholar
[63] Burghartz, J.N. et. al., Microelctron. Engineering 15, 11 (1991)Google Scholar
[64] Kasper, E., König, U., and Wörner, K., patent DE 3828809 (1988)Google Scholar
[65] Kamins, T.I., Wang, A, patent US 444586 (1990)Google Scholar
[66] Herzog, H.J., and Kasper, E., J. Electroch. Soc. 132, 2227 (1985)Google Scholar
[67] König, U., Schäffler, F., and Behr, W., German patentGoogle Scholar
[68] König, U., Kuisl, M., Schäffler, F., Fischer, G., and Kiss, T., IEEE-EDL 11, 218 (1990)Google Scholar
[69] König, U., Schäffler, F., Fischer, G. and Kiss, T., unpublishedGoogle Scholar