Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-22T00:46:49.406Z Has data issue: false hasContentIssue false
  • English
  • Français

SiC Power Electronic Devices, MOSFETs and Rectifiers

Published online by Cambridge University Press:  10 February 2011

J. A. Cooper ,
S-H. Ryu ,
Y. LI ,
M. Matin ,
J. Spitz ,
D. T. Morisesette ,
H. M. McGlothlin ,
M. K. Das ,
M. R. Melloch  and
M. A. Capano
...Show all authors
J. A. Cooper
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
S-H. Ryu
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
Y. LI
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
M. Matin
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
J. Spitz
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
D. T. Morisesette
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
H. M. McGlothlin
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
M. K. Das
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
M. R. Melloch
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
M. A. Capano
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
J. M. Woodall
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN cooperj@ecn.purdue.edu
Get access

Abstract

SiC power switching devices have demonstrated performance figures of merit far beyond the silicon theoretical limits, but much work remains before commercial production will be feasible. A significant fraction of the remaining work centers on materials science issues. This paper reviews the current status of unipolar power switching devices in SiC and identifies the major technological and material science barriers that need to be overcome.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 3
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ziegler, G., Lanig, P., Theis, D., and Weyrich, C., IEEE Trans. Electr. Dev. 30 227 (1983).10.1109/T-ED.1983.21117Google Scholar
2. Carter, C.H. Jr, Tang, L., and Davis, R. F., 4th National Review Meeting on the Growth and Characterization of SiC, Raleigh, NC, USA, 1987; U.S. Patent No. 4,866,005 (Sept. 12, 1989) R. F. Davis, C. H. Carter, Jr., and C. E. Hunter.Google Scholar
3. Cree Research, Inc., Durham, NC.Google Scholar
4. Baliga, B. J., IEEE Electron Device Lett. 66 455 (1989).10.1109/55.43098Google Scholar
5. Cooper, J. A. Jr, Physica Stat. Solidi (a), 162 305 (1997).10.1002/1521-396X(199707)162:1<305::AID-PSSA305>3.0.CO;2-73.0.CO;2-7>Google Scholar
6. Schoen, K. J., Woodall, J. M., Cooper, J. A. Jr, and Melloch, M. R., IEEE Trans. Electr. Dev. 45, 1595 (1998).10.1109/16.701494Google Scholar
7. Matsunami, H., Ueda, T., and Nishino, H., Proc. Mat. Res. Soc. Symp. 162, 397 (1990).Google Scholar
8. Itoh, A., Kimoto, T., and Matsunami, H., IEEE Electron Device Lett. 66 139 (1996).10.1109/55.485193Google Scholar
9. Alok, D., Baliga, B. J., and McLarty, P. K., IEEE Electron Device Lett. 66 394 (1994).10.1109/55.320979Google Scholar
10. Singh, R. and Palmour, J. W., Proc. Int'l. Symp. on Power Semi. Devices and ICs, Weimar, Germany, May 26–29, 1997.Google Scholar
11. Dolny, G. M., Morisette, D. T., Shenoy, P. M., Zafrani, M., Gladish, J., Woodall, J. M., Cooper, J. A. Jr, and Melloch, M. R., IEEE Device Res. Conf., Charlottesville, VA, June 22 - 24, 1998.Google Scholar
12. Carter, C. H. Jr, Cree Research, Inc., Durham, NC, private communication.Google Scholar
13. Wang, S., Dudley, M.. Carter, C. H. Jr, and Hong, H. S., Mat. Res. Soc. Symp. Proc., 339, 735 (1994).Google Scholar
14. Neudeck, P. G. and Fazi, C., IEEE Electron Device Lett. 66 96 (1997).Google Scholar
15. McGlothlin, H. M., Morisette, D. T., Cooper, J. A., and Melloch, M. R., unpublished.Google Scholar
16. Shenoy, J. N., Chindalore, G. L., Melloch, M. R., Cooper, J. A. Jr, Palmour, J. W., and Irvine, K. G., J. Electronic Mat'ls, 24, 303 (1995).10.1007/BF02659691Google Scholar
17. Lipkin, L. A. and Palmour, J. W., J. Electr. Mat'ls, 25, 909 (1996).10.1007/BF02666657Google Scholar
18. Das, M. K., Cooper, J. A. Jr, and Melloch, M. R., J. Electr. Mat'ls, 27 353 (1998).10.1007/s11664-998-0414-7Google Scholar
19. Shenoy, J. N., Das, M. K., Cooper, J. A. Jr, Melloch, M. R., and Palmour, J. W., J. Appl. Physics, 79, 3042 (1996).10.1063/1.361244Google Scholar
20. Maranowski, M. M. and Cooper, J. A. Jr, IEEE Trans. Electr. Dev. 46, (1999).Google Scholar
21. Das, M. K., Cooper, J. A. Jr, Melloch, M. R., and Capano, M. A., Semi. Interface Specialists Conf, San Diego, CA, December 3 - 5, 1998.Google Scholar
22. Capano, M. A., Ryu, S- H., Melloch, M. R., and Cooper, J. A. Jr, J. Electr. Mat'ls, 27, 370 (1998).10.1007/s11664-998-0417-4Google Scholar
23. Santharumar, R., Das, M. K., Capano, M. A., Cooper, J. A., and Melloch, M. R., unpublished.Google Scholar
24. Shenoy, P.M. and Baliga, B. J., IEEE Electron Device Lett., 18, 589 (1997).10.1109/55.644080Google Scholar
25. Tan, J., Cooper, J. A. Jr, and Melloch, M. R., IEEE Electron Device Lett., 19, 487 (1998).10.1109/55.735755Google Scholar
26. Spitz, J., Melloch, M. R., Cooper, J. A. Jr, and Capano, M. A., IEEE Electron Device Lett., 19 100 (1998).10.1109/55.663527Google Scholar