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SiC epitaxial growth on porous SiC substrates

  • G. Melnychuck (a1), M. Mynbaeva (a2), S. Rendakova (a3), V. Dmitriev (a2) (a3) and S. E. Saddow (a1)...

Abstract

We report on the growth and crystal quality of CVD epitaxial layers grown on porous SiC (PSC) substrates. A layer of porous SiC was fabricated by surface anodization of commercial 4H and 6H-SiC (0001)Si face off-axis wafers. The 4H and 6H-SiC epilayers were grown on porous SiC (PSC) substrates using atmospheric pressure CVD at 1580°C and a Si to C ratio of 0.3. Results of X-ray diffraction, RHEED, SEM and AFM characterization demonstrated good surface quality of the films grown on porous material. PL data indicate a greatly improved defect structure in the epi layers grown on PSC as compared to control samples. Preliminary etch pit experiments to estimate the dislocation density indicate a three-fold reduction in defect density in the epi material grown on PSC substrates as compared to epi grown conventional substrates.

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[1] Shor, J.S., Grimberg, I., Weiss, B., Kurtz, A. D., Appl. Phys. Lett., 62 (22), 28362838 (1993).
[2] Harris, C. I., Konstantinov, A. O., Hallin, C. and Janzen, E., Appl. Phys. Lett. 66 (12), 15011502 (1995).
[3] Mynbaeva, M., Savkina, N., Tregubova, A., Scheglov, M., Lebedev, A., Zubrilov, A., Titkov, A., Kryganovskii, A., Mynbaev, K., Tsvetkov, D., Stepanov, S., Cherenkov, A., Kotousova, I. and Dmitriev, V.. Proceed. of the MRS 1999 Fall Meeting, Boston, MS (1999) (in press).
[4] Saddow, S. E., Mazzola, M. S., Rendakova, S. V., and Dmitriev, V. A., Material Science and Engineering B, B61–62, 158160 (1999).

SiC epitaxial growth on porous SiC substrates

  • G. Melnychuck (a1), M. Mynbaeva (a2), S. Rendakova (a3), V. Dmitriev (a2) (a3) and S. E. Saddow (a1)...

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