Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-06-26T19:17:03.206Z Has data issue: false hasContentIssue false
  • English
  • Français

SiC epitaxial growth on porous SiC substrates

Published online by Cambridge University Press:  15 March 2011

G. Melnychuck ,
M. Mynbaeva ,
S. Rendakova ,
V. Dmitriev  and
S. E. Saddow
G. Melnychuck
Affiliation:
Emerging Materials Research Laboratory, Department of Electrical & Computer Engineering, Mississippi State, MS 39762-9571
M. Mynbaeva
Affiliation:
Ioffe Institute, St. Petersburg, 194021, Russia
S. Rendakova
Affiliation:
TDI, Inc., Gaithersburg, MD, 20877
V. Dmitriev
Affiliation:
Ioffe Institute, St. Petersburg, 194021, Russia TDI, Inc., Gaithersburg, MD, 20877
S. E. Saddow
Affiliation:
Emerging Materials Research Laboratory, Department of Electrical & Computer Engineering, Mississippi State, MS 39762-9571
Get access

Abstract

We report on the growth and crystal quality of CVD epitaxial layers grown on porous SiC (PSC) substrates. A layer of porous SiC was fabricated by surface anodization of commercial 4H and 6H-SiC (0001)Si face off-axis wafers. The 4H and 6H-SiC epilayers were grown on porous SiC (PSC) substrates using atmospheric pressure CVD at 1580°C and a Si to C ratio of 0.3. Results of X-ray diffraction, RHEED, SEM and AFM characterization demonstrated good surface quality of the films grown on porous material. PL data indicate a greatly improved defect structure in the epi layers grown on PSC as compared to control samples. Preliminary etch pit experiments to estimate the dislocation density indicate a three-fold reduction in defect density in the epi material grown on PSC substrates as compared to epi grown conventional substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T4.2.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Shor, J.S., Grimberg, I., Weiss, B., Kurtz, A. D., Appl. Phys. Lett., 62 (22), 2836–2838 (1993).Google Scholar
[2] Harris, C. I., Konstantinov, A. O., Hallin, C. and Janzen, E., Appl. Phys. Lett. 66 (12), 1501–1502 (1995).Google Scholar
[3] Mynbaeva, M., Savkina, N., Tregubova, A., Scheglov, M., Lebedev, A., Zubrilov, A., Titkov, A., Kryganovskii, A., Mynbaev, K., Tsvetkov, D., Stepanov, S., Cherenkov, A., Kotousova, I. and Dmitriev, V.. Proceed. of the MRS 1999 Fall Meeting, Boston, MS (1999) (in press).Google Scholar
[4] Saddow, S. E., Mazzola, M. S., Rendakova, S. V., and Dmitriev, V. A., Material Science and Engineering B, B61–62, 158–160 (1999).Google Scholar