Skip to main content Accessibility help
×
Home

Si(001) Molecular Beam Epitaxy: Enhanced Diffusion or Bonding?

  • S. Clarke (a1), M.R. Wilby (a1) and D.D. Vvedensky (a1)

Abstract

Through application of a lattice model of the Si(001) surface, implemented in a Monte Carlo growth simulation we investigate the structural evolution of the Si(001) surface during molecular beam epitaxy. Particular emphasis is placed upon identifying the role of both enhanced diffusion and directional bonding.

Copyright

References

Hide All
[1] Mo, Y.-W, Kariotis, R., Savage, D.E., Lagally, M.G., Surf. Sci. 219 L551 (1989).
[2] Wilby, M.R., Clarke, S., Kawamura, T., and Vvedensky, D.D., Phys. Rev. B (in press).
[3] Ichikawa, M. and Doi, T., Appl. Phys. Lett. 50, 1141 (1987).
[4] Clarke, S. and Vvedensky, D.D., Phys. Rev. B 37, 6559 (1988).
[5] Clarke, S., Wilby, M.R., Vvedensky, D.D., and Kawamura, T., Phys. Rev. B 40, 1369 (1989).
[6] Loenen, E.J. Van, Private Communication.
[7] Sakamoto, T., Kawai, N.J., Nakagawa, T., Ohta, K., and Kojima, T., Appl. Phys. Lett. 47, 617 (1985).
[8] Sakamoto, T., Kawamura, T., Nagao, S., Hashiguchi, G., Sakamoto, K., Kuniyoshi, K., J. Crystal Growth 81, 59 (1987).
[9] Sakamoto, K., Sakamoto, T., Miki, K., Nagao, S., Hashiguchi, G., Kuniyoshi, K., and Takahashi, N., J. Electrochem Soc. (in press).
[10] Hoeven, A.J., Lenssinck, J.M., Dijkkamp, D., Loenen, E.J. van, and Dielman, J., Phys. Rev. Lett. 63, 1830 (1989)

Si(001) Molecular Beam Epitaxy: Enhanced Diffusion or Bonding?

  • S. Clarke (a1), M.R. Wilby (a1) and D.D. Vvedensky (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed