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Si Wire Light Emission Changes During Si/SiOx Interface Formation

Published online by Cambridge University Press:  21 March 2011

F.G. Becerril-Espinoza ,
T. V. Torchynska ,
M. Morales Rodríguez ,
L. Khomenkova  and
L.V. Scherbina
F.G. Becerril-Espinoza
Affiliation:
ESFM - National Polytechnic Institute, Mexico D.F., 07738, Mexico.
T. V. Torchynska
Affiliation:
ESFM - National Polytechnic Institute, Mexico D.F., 07738, Mexico.
M. Morales Rodríguez
Affiliation:
ESFM - National Polytechnic Institute, Mexico D.F., 07738, Mexico.
L. Khomenkova
Affiliation:
Inst. Semiconductor Physics at National Academy of Sciences, Kiev, 03028, Ukraine.
L.V. Scherbina
Affiliation:
Inst. Semiconductor Physics at National Academy of Sciences, Kiev, 03028, Ukraine.
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Abstract

Photoluminescence (PL), PL excitation, Raman scattering, IR absorption spectra as well as PSi surface morphology, have been studied as a function of Si/SiOx interface formation during PSi ageing in ambient air with the aim to reveal a PL mechanism. It is shown that fresh- prepared PSi layers created at low values of the anodization current Ia is characterized by “red” emission band centered at 1.72 eV, while the samples prepared at higher values of Ia have “orange” PL band centered at 2.00 eV. During oxidation in ambient air two processes take place at the PSi ageing: the oxidation of small size Si nano-crystallites up to their disappearing and the change of silicon oxide composition at the Si/SiOx crystallite surface. These processes initiate changes in PL and PL excitation spectra. The peak position of “red” PL band shifts to the high-energy up to 1.80-1.85 eV while the “orange” band does not change essentially.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.35
Copyright
Copyright © Materials Research Society 2004

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References

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