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Si. I-x-y. GexCy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon

Published online by Cambridge University Press:  21 February 2011

E. Fogarassy ,
D. Dentel ,
JJ. Grob ,
B. Prévot ,
J.P. Stoquert  and
R. Stuck
E. Fogarassy
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
D. Dentel
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
JJ. Grob
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
B. Prévot
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
J.P. Stoquert
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
R. Stuck
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
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Abstract

We investigate, for the first time, the possibility to crystallize heavily Ge and C implanted silicon substrates by excimer-laser annealing performed in the molten regime. It is demonstrated that the crystalline quality of the laser grown SiGeC alloys strongly depends on the initial dose of implanted carbon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 585
Copyright
Copyright © Materials Research Society 1995

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