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Si Film Growth by Supercooling of a Molten Si Alloy Film

Published online by Cambridge University Press:  28 February 2011

R. L. Wallace ,
J. Yi  and
W. A. Anderson
R. L. Wallace
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Bonner Hall, Buffalo, N.Y. 14260
J. Yi
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Bonner Hall, Buffalo, N.Y. 14260
W. A. Anderson
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Bonner Hall, Buffalo, N.Y. 14260
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Abstract

A method is described for the deposition of large-grain polysilicon films at low substrate temperatures. This technique uses precipitation from a thin molten prelayer of Si-Au or Si-Au which is supersaturated with Si from a DC magnetron sputter gun. Typical growth temperatures are 600° C for the Si-Al layer, and 500° C for the Si-Au layer. Growth rates of 6 μm/hr have been achieved, though higher rates seem possible. Films of 20 μm thickness and grain size up to several hundred μm have been grown on SiO2 and sheet Mo substrates using Au and Al as the “solvent” metals. The proposed model for film growth was confirmed by cross-section EDS studies of the film/substrate interface. Film crystallinity was confirmed by etching studies, X-ray diffraction, and selected area diffraction. Preferential nucleation has been achieved using a patterned suicide forming metal (Cr,Ni) on RuO2, coated oxidized wafer. A loss mechanism of the solvent metal during growth was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 671
Copyright
Copyright © Materials Research Society 1993

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References

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