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Short-Channel Effect Suppression In Silicon Carbide Power Mesfets

  • A. Konstantinov (a1), A-M. Saroukhan (a1), S. Karlsson (a1), C. Harris (a1) and A. Litwin (a2)...

Abstract

We demonstrate that the performance of silicon carbide MESFETs is largely determined by short-channel effects. Parasitic bipolar transistor turn-on limits the operation voltage to a small fraction of the theoretically expected value for an ideal device. Tradeoffs are shown to exist between optimum gate length and on-state current on one hand, and the maximum blocking voltage on the other hand. Composite p-buffers with an elevated doping in the vicinity of the active layer considerably increase the operation voltage. Silicon carbide MESFETs utilizing composite buffers are reported.

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[1] Sze, S.M.. Semiconductor Device Physics, (Wiley, NY, 1982), chap. 8.
[2] Avant Corp., Fremont, CA 94539, USA.
[3] Bakowski, M., Gustafsson, U., Lindefelt, U., Phys Stat. Sol. A162 421 (1997)
[4] Wood, A., Dragon, C. and Burger, W., Proc. IEDM-1996, 86 (IEEE, 1996).
[5] Epigress AB, SE-22370 Lund, Sweden.
[6] CREE Inc., Durham, NC 27703, USA

Short-Channel Effect Suppression In Silicon Carbide Power Mesfets

  • A. Konstantinov (a1), A-M. Saroukhan (a1), S. Karlsson (a1), C. Harris (a1) and A. Litwin (a2)...

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