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Short Time annealing of As and B Ion Implanted Si using Tungsten-Halogen Lamps

  • T. O. Sedgwick (a1), R. Kalish (a1), S. R. Mader (a1) and S. C. Shatas (a2)

Abstract

B and As implanted Si wafers have been thermally annealed by an array of tungsten halogen lamps at 1000–1200°C for 1–10 sec. Annealing above 1100°C leaves the crystal free of extended defects in all cases as determined by TEM. An enhanced diffusion is observed above normal values characterized by a low activation energy for both As and B samples. This enhanced diffusion is transient and occurs within about one second since the RBS and SIMS dopant profiles are identical for 1 sec and a 10 sec anneal.

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Short Time annealing of As and B Ion Implanted Si using Tungsten-Halogen Lamps

  • T. O. Sedgwick (a1), R. Kalish (a1), S. R. Mader (a1) and S. C. Shatas (a2)

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