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Short period p-type AlN/AlGaN superlattices for deep UV light emitters

Published online by Cambridge University Press:  31 January 2011

Sergey A. Nikishin ,
Boris Borisov ,
Vladimir Mansurov ,
Mahesh Pandikunta ,
Indra Chary ,
Gautam Rajanna ,
Ayrton Bernussi ,
Yuriy Kudriavtsev ,
Rene Asomoza  and
Kirill Bulashevich
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Sergey A. Nikishin
Affiliation:
sergey.a.nikishin@ttu.edu, Texas Tech University, Nano Tech Center, Lubbock, Texas, United States
Boris Borisov
Affiliation:
b.borisov@ttu.edu, Texas Tech University, Nano Tech Center, Lubbock, Texas, United States
Vladimir Mansurov
Affiliation:
v.mansurov@ttu.edu, Texas Tech University, Nano Tech Center, Lubbock, Texas, United States
Mahesh Pandikunta
Affiliation:
mahesh.pandikunta@ttu.edu, United States
Indra Chary
Affiliation:
indra.chary@ttu.edu, Texas Tech University, Nano Tech Center, Lubbock, Texas, United States
Gautam Rajanna
Affiliation:
gautam.Rajanna@ttu.edu, Texas Tech University, Nano Tech Center, Lubbock, Texas, United States
Ayrton Bernussi
Affiliation:
ayrton.bernussi@ttu.edu, Texas Tech University, Nano Tech Center, Lubbock, Texas, United States
Yuriy Kudriavtsev
Affiliation:
yurik@sinvestav.mx, CINVESTAV, SIMS Laboratory of SEES, Mexico D.F., Mexico
Rene Asomoza
Affiliation:
r.asomoza@cinvestav.mx, CINVESTAV, SIMS Laboratory of SEES, Mexico D.F., Mexico
Kirill Bulashevich
Affiliation:
kirill.bulashevich@str-soft.com, STR Group - Soft-Impact, Ltd., St. Petersburg, Russian Federation
Sergey Yu. Karpov
Affiliation:
karpov@softimpact.ru, STR Group – Soft-Impact, Ltd.,, St. Petersburg, Russian Federation
Sandeep Sohal
Affiliation:
sandeep.sohal@ttu.edu, Texas Tech University, Nano Tech Center, Lubbock, Texas, United States
Mark Holtz
Affiliation:
MARK.HOLTZ@ttu.edu, Texas Tech University, Nano Tech Center, Lubbock, Texas, United States
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Abstract

The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole concentration is ∼ 7×1017 cm-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ∼ 5×10-5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.

Keywords

electrical propertiesmolecular beam epitaxy (MBE)nanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I10-03
Copyright
Copyright © Materials Research Society 2010

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References

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