Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-19T22:27:30.625Z Has data issue: false hasContentIssue false
  • English
  • Français

Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer

Published online by Cambridge University Press:  01 February 2011

Sang-Hoon Jung ,
Jae-Hoon Lee  and
Min-Koo Han
Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: jsh@emlab.snu.ac.kr
Jae-Hoon Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: jsh@emlab.snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: jsh@emlab.snu.ac.kr
Get access

Abstract

A short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A7.8
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Sameshima, T., Usui, S., and Sekiya, M., IEEE Electron Device Lett., 7, 276, 1986 Google Scholar
[2] Cheng, H. C., Cheng, L. J. et al. AMLCD Tech. Dig., 281, 2000 Google Scholar
[3] Sposili, R. S. and Im, J. S., Appl. Phys. Lett., 69, 2864, 1996 Google Scholar
[4] Crowder, M. A., Im, J. S. et al, IEEE Electron Device Lett., 19, 306, 1998 Google Scholar
[5] Jeon, J. H., Han, M. K. et al., IEDM'2000, 213, 2000 Google Scholar