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Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer

  • Sang-Hoon Jung (a1), Jae-Hoon Lee (a1) and Min-Koo Han (a1)

Abstract

A short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.

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[1] Sameshima, T., Usui, S., and Sekiya, M., IEEE Electron Device Lett., 7, 276, 1986
[2] Cheng, H. C., Cheng, L. J. et al. AMLCD Tech. Dig., 281, 2000
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[4] Crowder, M. A., Im, J. S. et al, IEEE Electron Device Lett., 19, 306, 1998
[5] Jeon, J. H., Han, M. K. et al., IEDM'2000, 213, 2000

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