Hostname: page-component-6d856f89d9-72csx Total loading time: 0 Render date: 2024-07-16T06:32:01.562Z Has data issue: false hasContentIssue false

Shaping of Bulk Metallic Glasses by Simultaneous Application of Electrical Current and Low Stress

Published online by Cambridge University Press:  17 March 2011

A.R. Yavari
Affiliation:
LTPCM, Institut National Polytechnique de Grenoble, LTPCM CNRS umr 5614, BP 75, St-Martin d'Héres Campus, 38402France, euronano@ltpcm.inpg.fr
M. F. de Oliveira
Affiliation:
Department of Materials Engineering, Federal University of Sao Carlos, SP, Brasil
W.J. Botta
Affiliation:
Department of Materials Engineering, Federal University of Sao Carlos, SP, Brasil
Get access

Abstract

Using the intrinsic materials properties of bulk metallic glasses (BMG), namely electrical resistivities two orders of magnitude higher than good conductors and a Newtonian viscous-flow regime of deformability, a new electromechanical process has been developed for shaping, joining and engraving of BMGs. The wider the liquid supercooled region between the glass transition temperature Tg and the crystallisation temperature Tx of the bulk metallic glass, the easier the application of the new process. In this range, the undercooled liquid deforms in a quasi-Newtonian way, allowing thermomechanical shaping in the low viscosity range as for oxide glasses. The new electromechanical processing technology has been used for economical and rapid shaping at low applied stresses by eliminating the thermal mass of the furnace and the need to heat the deformation dies. The process parameters are adaptable for the full maintenance of the glassy state or when desired, for appropriate compositions, for nanocrystallisation during the joining or shaping operation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Drehman, A.J., Greer, A.L. and Turnbull, D., Appl. Phys. Lett. 41, 716 (1982).Google Scholar
2. Inoue, A., Acta Mater. 48, 279 (2000).Google Scholar
3. Johnson, W.L., Proc. ISMANAM-95, Mater. Sci. Forum 225, 35 (1996).Google Scholar
4. Peker, A. and Johnson, W.L., Appl. Phys. Lett. 63, 2342 (1993).Google Scholar
5. Inoue, A. and Gook, J.S., Mater. Trans. JIM, 36, 1180 (1995).Google Scholar
6. Kawamura, Y., Shibata, T., Inoue, A. and Masumoto, T., Acta Mater., 46, 253 (1998).Google Scholar
7. Kavesh, S. and Bretts, G. R., US patent 4115682, Sept. 19, 1978.Google Scholar
8. Ballard, D.E., Frischmann, P. G. and Taub, A.I., US patent 5005456, Apr. 9, 1991.Google Scholar
9. Horimura, H., US patent 5306463, Apr. 26, 1994.Google Scholar
10. Pekker, A., Bakke, E. and Johnson, W.L., US patent 5896642 Apr. 27, 1999.Google Scholar
11. Oliveira, M. de, Botta, W.J. , F, and Yavari, A.R., Mater. Trans. JIM, 41, 1501 (2000).Google Scholar
12. Yavari, A.R. and Botta, W.J. , F., French patent 0003070, Feb.10, 2000.Google Scholar
13. , Inoue, Fan, C., Saida, J., Zhang, T., Sci. and Tech. of Advanced Mater. 1, 73 (2000).Google Scholar
14. Knobel, M., Piccin, R., Silva, F. C.S. da, Filho, W. J. Botta, Yavari, A. R., J. Metastable & Nanocrystalline Mater. 7, 49 (2000).Google Scholar