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Shallow Donor Centers in Erbium-Implanted Silicon Subjected to High-Temperature Annealing

Published online by Cambridge University Press:  15 February 2011

V.V. Emtsev ,
D.S. Poloskin ,
N.A. Sobolev  and
E.I. Shek
V.V. Emtsev
Affiliation:
A.F. loffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia, emtsev@jsc.pti.spb.su
D.S. Poloskin
Affiliation:
A.F. loffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia, emtsev@jsc.pti.spb.su
N.A. Sobolev
Affiliation:
A.F. loffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia, emtsev@jsc.pti.spb.su
E.I. Shek
Affiliation:
A.F. loffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia, emtsev@jsc.pti.spb.su
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Abstract

Consideration has been given to production processes of shallow donor centers formed in silicon after implantation of erbium ions or co-implantation of erbium and oxygen ions followed by annealing at 700° and 900°C. Analysis of the experimental data obtained in this work made it possible to put forward some suggestions concerning the nature of these defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 243
Copyright
Copyright © Materials Research Society 1997

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