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Separation of Nucleation and Growth Processes of Nanocrystalline Silicon by Hydrogen Radical Treatment of Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

Masanori Otobe  and
Shunri Oda
Masanori Otobe
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan.
Shunri Oda
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan.
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Abstract

We have investigated nucleation and growth mechanism of nanocrystalline silicon (nc-Si) based on the experimental observation of plan-view transmission electron microscopy. Nanocrystalline Si has been prepared by hydrogen radical annealing of hydrogenated amorphous silicon (a-Si:H) layer, which is deposited on hydrogen radical treated a-Si:H buffer layer. Nanocrystallization depends critically upon hydrogen radical annealing time and the thickness ofa-Si:H layer. Hydrogen radicals play important roles in both nucleation and growth processes in a different way. Growth of nc-Si can be explained by “hydrogen diffusion model”, in which hydrogen radicals diffusing through a-Si:H layer to interface cause nanocrystallization. Our results imply that nuclei for nc-Si are generated at the interface between a-Si:H and under layer when treated by hydrogen radicals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 519
Copyright
Copyright © Materials Research Society 1993

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References

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