Hostname: page-component-76fb5796d-25wd4 Total loading time: 0 Render date: 2024-04-26T21:19:52.879Z Has data issue: false hasContentIssue false

Semi-Insulating InP Particle Detectors For X- And γ-Ray Detection

Published online by Cambridge University Press:  10 February 2011

P. G. Pelfer
Affiliation:
Department of Physics of the University of Florence and INFN, Largo E.Fermi 2 1-50125 Firenze, Italy, pelfer@fi.infn.it
F. Dubecký
Affiliation:
Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cest 9 SK-84239 Bratislava, Slovakia
R. Fomari
Affiliation:
MASPEC CNR, Parma, Via Chiavari 18/A, I-43100 Parma, Italy
M. Pikna
Affiliation:
Faculty of Mathematics and Physics, Comenius University, Mlynská dolina SK-842 33 Bratislava, Slovakia
M. Krempaský
Affiliation:
MASPEC CNR, Parma, Via Chiavari 18/A, I-43100 Parma, Italy
E. Gombia
Affiliation:
MASPEC CNR, Parma, Via Chiavari 18/A, I-43100 Parma, Italy
J. Darmo
Affiliation:
Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cest 9 SK-84239 Bratislava, Slovakia
R. Mosca
Affiliation:
MASPEC CNR, Parma, Via Chiavari 18/A, I-43100 Parma, Italy
M. Sekácová
Affiliation:
Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cest 9 SK-84239 Bratislava, Slovakia
Get access

Abstract

A study of electrical properties and detection performances of the semi-insulating (SI) InP based detectors is presented. Detectors with a top P+ layer and a Schottky back contact give the charge collection efficiency about 90 % and an energy resolution 3.7% (FWHM) for 5.48MeV α-particles at 250 K. Detection of X-rays (122 keV and 60 keV) photons in temperature region 220–250 K is demonstrated. Multiple peaking observed during detection of photons is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1- “Semiconductors for Room Temperature Nuclear Detector Applications”, edited by Schlessinger, T.E. and James, R.B. in Semiconductors and Semimetals, treatise editors:Willardson, R.K., Beer, A.C. and Weber, E.R., 43, (Academic Press, San Diego, 1995).Google Scholar
2- Lund, J.C. et al., Nucl. Instr. Meth. A272, 885 (1988)Google Scholar
3- Olschner, F. et al., IEEE Trans. on Nucl. Sci. NS–36, 210 (1989)Google Scholar
4- Suzuki, Y.,Fukuda, Y., and Nagashima, Y., Nucl. Instr. Meth. A275 142 (1989)Google Scholar
5- Valentini, A. et al., Nucl. Instr. Meth. A373, 47 (1996)Google Scholar
6- Dubecký, F., et al., Nucl. Instr. Meth. A (1998), in print.Google Scholar
7- Alietti, M. et al., Nucl. Instr. Meth. A362, 344 (1995)Google Scholar