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Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs

  • M. Kuball (a1), S. Rajasingam (a1), A. Sarua (a1), M. J. Uren (a2), T. Martin (a2), R. S. Balmer (a2) and K. P. Hilton (a2)...

Abstract

We report on the in-situ measurement of temperature, i.e., self-heating effects, in multi-finger AlGaN/GaN HFETs grown on SiC substrates. Optical micro-spectroscopy was used to measure temperature with 1m spatial resolution. Thermal resistance (temperature rise per W/mm) was measured as a function of device pitch and gate finger width. There is significant thermal cross talk in multi-finger AlGaN/GaN HFETs and this needs to be seriously considered for device performance and ultimately device reliability. A comparison with theoretical modeling is presented. Uncertainties in modeling parameters currently make modeling less reliable than experimental temperature assessment of devices.

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