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Self-Heating Effects in High-Power AlGaN/GaN HFETs

  • M. Kuball (a1), M.J. Uren (a2), J.M. Hayes (a1), T. Martin (a2), J.C.H. Birbeck (a2), R.S. Balmer (a2) and B.T. Hughes (a2)...

Abstract

We report on the non-invasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN heterostructure field effect transistors (HFETs). Micro-Raman spectroscopy was used to produce temperature maps with ≈1 μm spatial resolution and a temperature accuracy of better than 10°C. Significant self-heating effects in the source-drain opening of AlGaN/GaN HFETs were measured. Devices grown on sapphire and SiC substrates were compared. Three-dimensional finite-difference heat dissipation calculations were performed as function of device geometry.

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