Hostname: page-component-5c6d5d7d68-txr5j Total loading time: 0 Render date: 2024-08-19T22:00:23.925Z Has data issue: false hasContentIssue false

Self-control Phenomenon for Crystallinity and Morphology Observed at Epitaxial Growth of BaTiO3 by Alternating Deposition Method

Published online by Cambridge University Press:  10 February 2011

K. Shimoyama
Affiliation:
Institute of Materials Science, and Center for Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan, simoyama@esys.tsukuba.ac.jp
T. Kanda
Affiliation:
Institute of Materials Science, and Center for Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
M. Iida
Affiliation:
Institute of Materials Science, and Center for Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
T. Maeda
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan
K. Yamabe
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan
Get access

Abstract

We directly observed self-control crystallization of epitaxial BaTiO3 films during alternate depositions of BaO and TiO2. When TiO2 (or BaO) was supplied excessively, surface crystallinity and smoothness degraded due to three-dimensional (3D) growth. However, when the following BaO (or TiO2) was supplied onto the rough TiO2 (or BaO) surface, the surface smoothness was recovered drastically. It was found that a single phase BaTiO3 film grew by repeating the alternate deposition cycle of excessive supply of both BaO and TiO2. The mechanism of this phenomenon was discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Iijima, K., Terashima, T., Bando, Y., Kamigaki, K. and Terauchi, H.: J. Appl. Phys. 72, (1992) 2840 10.1063/1.351536Google Scholar
2) Tsurumi, T., Suzuki, T., Yamane, M. and Daimon, M.: Jpn. J, Appl. Phys. 33, (1994) 5192.10.1143/JJAP.33.5192Google Scholar
3) Shigetani, H., Kobayashi, K., and Fujimoto, M., Sugimura, W., Matsui, Y. and Tanaka, J.: J. Appl. Phys. 81, (1997) 693.10.1063/1.364209Google Scholar
4) Yoneda, Y., Okabe, T., Sakaue, K. and Terauchi, H.: Surf. Sci. 410, (1998) 62.10.1016/S0039-6028(98)00296-9Google Scholar
5) Migita, S., Kasai, Y., Ota, H., Sakai, S.: Appl. Phys. Lett. 71, (1997) 3712.10.1063/1.120490Google Scholar
6) Nishizawa, J., Abe, H., and Kurabayashi, T.: J. Electrochem. Soc. 132 No.5, (1985) 1197.10.1149/1.2114058Google Scholar
7) Hill, D. M., Meyer, H. M. III, and Weaver, J. H.: J. Appl. Phys. 65, (1989) 4943.10.1063/1.343211Google Scholar