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Self-assembled Ge quantum dots on SiC substrates grown by UHV-CVD

  • C. Calmes (a1), V. Le, D. Bouchier (a1), S. E. Saddow (a1), V. Yam (a1), D. Débarre (a1), R. Laval (a1) and C. Clerc (a1)...

Abstract

We report our first results using a ultra high vacuum chemical vapor deposition (UHV-CVD) system to form Ge quantum dots on off-axis SiC substrates. Pure SiH4 and hydrogen-diluted GeH4 were used as gas precursors. The SiC substrates were chemically cleaned using the modified RCA process and the SiO2 layer was removed in-situ under a low SiH4 flow rate at a temperature between 1030°C and 1080°C. The Ge quantum dots were grown at a temperature of 750°C. In-situ reflection high-energy electron diffraction (RHEED) was used to monitor the surface cleaning and the Ge quantum dot growth. Ex-situ scanning electron microscope and atomic force microscopy were used to confirm the presence of Ge dots. The observed dots are smaller (350 Å width and 100 Å height) than similar Ge dots grown on Si.

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[1] Le Thanh, V., Bouchier, D., and Debarre, D., Phys. Rev. B 56, 10505 (1997).
[2] Le Thanh, V., Boucaud, P., Debarre, D., Zheng, Y., Bouchier, D. and Lourtioz, J.-M., Phys. Rev. B 58, 13115 (1998).
[3] Le Thanh, V., Yam, V., Boucaud, P., Fortuna, F., Ulysse, C., Bouchier, D., Vervoort, L. and Lourtioz, J.-M., Phys. Rev. B 60, 5851 (1999).
[4] Fissel, A., Akhtariev, R. and Richter, W., Thin Solid Films 380, 42 (2000).
[5] Hess, G., Bauer, A., Krausslich, J., Fissel, A., Schroeter, B., Richter, W., Schell, N., Matz, W., and Goetz, K., Thin Solid Films 380, 86 (2000).

Self-assembled Ge quantum dots on SiC substrates grown by UHV-CVD

  • C. Calmes (a1), V. Le, D. Bouchier (a1), S. E. Saddow (a1), V. Yam (a1), D. Débarre (a1), R. Laval (a1) and C. Clerc (a1)...

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