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Self-Aligned Process For Emitter- And Base- Regrowth GaN HBTs And BJTs

  • K. P. Lee (a1), A. P. Zhang (a2), G. Dang (a2), F. Ren (a2), J. Han (a3), S.N.G. Chu (a4), W. S. Hobson (a4), J. Lopata (a4), C. R. Abernathy (a1), S. J. Pearton (a1) and J. W. Lee (a5)...

Abstract

The development of a self-aligned fabrication process for small emitter contact area (2×4 um2) GaN/AlGaN heterojunction bipolar transistors and GaN bipolar junction transistors is described. The process features dielectric-spacer sidewalls, low damage dry etching and selected-area regrowth of p-GaAs(C) on the base contact or n-GaN/AlGaN on the emitter contact. Series resistance effects are still found to influence the device performance.

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Self-Aligned Process For Emitter- And Base- Regrowth GaN HBTs And BJTs

  • K. P. Lee (a1), A. P. Zhang (a2), G. Dang (a2), F. Ren (a2), J. Han (a3), S.N.G. Chu (a4), W. S. Hobson (a4), J. Lopata (a4), C. R. Abernathy (a1), S. J. Pearton (a1) and J. W. Lee (a5)...

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