No CrossRef data available.
Article contents
Self-Aligned Process For Emitter- And Base- Regrowth GaN HBTs And BJTs
Published online by Cambridge University Press: 17 March 2011
Abstract
The development of a self-aligned fabrication process for small emitter contact area (2×4 um2) GaN/AlGaN heterojunction bipolar transistors and GaN bipolar junction transistors is described. The process features dielectric-spacer sidewalls, low damage dry etching and selected-area regrowth of p-GaAs(C) on the base contact or n-GaN/AlGaN on the emitter contact. Series resistance effects are still found to influence the device performance.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2001