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A Selective/Non-Selective Epitaxy Process For A Novel Sige Hbt Architecture

Published online by Cambridge University Press:  10 February 2011

J. Schiz ,
J. M. Bonar  and
P Shburn
J. Schiz
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Southampton, S017 1B1J, UK.
J. M. Bonar
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Southampton, S017 1B1J, UK.
P Shburn
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Southampton, S017 1B1J, UK.
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Abstract

A selective/non-selective epitaxy process for a novel self-aligned SiGe HBT structure is described. It is shown that damage in the silicon substrate induced by reactive ion etching can be effectively removed and that this allows the growth of high quality selective and nonselective epitaxy. Control of the base thickness and doping can be maintained during selective and non-selective epitaxy, thereby demonstrating the feasability of producing the self-aligned HBT structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 321
Copyright
Copyright © Materials Research Society 1998

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References

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