Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-06-23T12:32:48.452Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Arsenic Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

Hua Fang ,
Mehmet C. Özttirk  and
Edmund G. Seebauer
Hua Fang
Affiliation:
ECE Department, North Carolina State University, Raleigh, NC 27695-7911
Mehmet C. Özttirk
Affiliation:
ECE Department, North Carolina State University, Raleigh, NC 27695-7911
Edmund G. Seebauer
Affiliation:
Department of Chemical Engineering, University of Illinois at Urbana-Champaign, Urbana-Champaign, Illinois 61801
Get access

Abstract

This work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi2. The films were deposited using TiCI4 and SiH4 on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×1014 cm−2 to 5*times;1015 cm−2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi2 nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surfacepassivation model to explain the effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 231
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tedrow, P.K., Ilderem, V. and Reif, R., Appl. Phys. Lett. 46, 189 (1985).Google Scholar
2. Mercier, J., Regolini, J.L. and Bensahel, D., J. Electron. Mater. 19, 253 (1990).10.1007/BF02733815Google Scholar
3. Saito, K., Amazawa, T. and Arita, Y., J. Electrochem. Soc. 140, 513 (1993).10.1149/1.2221078Google Scholar
4. Southwell, R.P. and Seebauer, E.G., J. Electrochem. Soc. 143, 1726 (1996).Google Scholar
5. Maury, D., Rostoll, M.L., Gayet, P., and Regolini, J.L., J. Vac. Sci. Technol. B 15, 133 (1997).Google Scholar
6. Xing, G.C., and Öztürk, M.C., Mater. Res. Sco. Proc. ULSI–VIII, 1993, pp 309–315 Google Scholar
7. Southwell, R.P. and Seebauer, E.G., J. Electrochem. Soc. 144, 2122 (1997).Google Scholar
8. Corcoran, S.F., Osburn, C.M., Parikh, N., Linton, R.W., Griffis, D.P., J. Vac. Sci. Technol. A 7, 3065 (1989).10.1116/1.576316Google Scholar
9. Wasserfall, J., and Ranke, W., Surface Science 33 1333, 1099 (1995)Google Scholar