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Selective Oxidation of Si in the Presence of W and Wn

Published online by Cambridge University Press:  10 February 2011

Boyang Lin ,
Ming Hwang ,
Jiong-Ping Lu ,
Wei-Yung Hsu ,
Mike Pas ,
Joe Piccirillo ,
Gary Miner ,
Kathy OConnor ,
Gary Xing  and
Dave Lopes
Boyang Lin
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, Tx
Ming Hwang
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, Tx
Jiong-Ping Lu
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, Tx
Wei-Yung Hsu
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, Tx
Mike Pas
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, Tx
Joe Piccirillo
Affiliation:
Applied Materials Inc, Santa Clara, CA
Gary Miner
Affiliation:
Applied Materials Inc, Santa Clara, CA
Kathy OConnor
Affiliation:
Applied Materials Inc, Santa Clara, CA
Gary Xing
Affiliation:
Applied Materials Inc, Santa Clara, CA
Dave Lopes
Affiliation:
Applied Materials Inc, Santa Clara, CA
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Abstract

In various device fabrication processes, such as in metal gate and low resistance word line fabrication, one needs to be able to oxidize Si without oxidizing metals present. We developed such a process using a combination of H2 and O2 in the H2 rich regime. The process developed is safe and is production worthy with excellent uniformity.

When carrying out the selective oxidation using H2/O2, a high Si oxidation rate is preferred which requires a high oxygen concentration. At the same time, the increase in metal sheet resistance, if any, must be small. We found that with an oxygen concentration as high as 20%, the increase in W sheet resistance is small. We present data on the oxidation rate of Si under different conditions as well as the selectivity of the process with respect to W and WN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 359
Copyright
Copyright © Materials Research Society 1998

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References

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