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Selective growth of MOVPE on AlGaAs/GaAs patterned substrates for quantum nano-structures

Published online by Cambridge University Press:  03 September 2012

Makoto Sakuma ,
Takashi Fukui ,
Kazuhide Kumakura  and
Junichi Motohisa
Makoto Sakuma
Affiliation:
Research Center for Interface Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060, Japan.
Takashi Fukui
Affiliation:
Research Center for Interface Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060, Japan.
Kazuhide Kumakura
Affiliation:
Research Center for Interface Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060, Japan.
Junichi Motohisa
Affiliation:
Research Center for Interface Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060, Japan.
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Abstract

We propose and demonstrate a new mask material of AlGaAs native oxide for selective area metalorganic vapor phase epitaxy (MOVPE) which has several advantages over conventional SiNx or SiO2 masks. GaAs selective area growth occurs on masked substrate of AlGaAs native oxide whose Al composition is 0.4, and the wire structures with trapezoidal cross section are formed along ]100] direction on (001) GaAs substrates with line & space mask pattern. Furthermore, after annealing the selectively grown GaAs wire samples, GaAs layers can be regrown with atomically smooth surface, in which GaAs wires are perfectly buried. The results show that this novel selective area MOVPE technique using AlGaAs native oxide masks are promising for quantum nano-structure device fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 259
Copyright
Copyright © Materials Research Society 1997

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