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Selective Epitaxial Growth of Strained Silicon-Germanium Films in Tubular Hot-Wall Low Pressure Chemical Vapor Deposition Systems

  • I -M. Leet (a1) (a2), W. -C. Wang (a3) (a2), M. T. K. Koh (a4) (a2), J.P. Denton (a3) (a2), E. P. Kvam (a4) (a2), G. W. Neudeck (a3) (a2) and C. G. Takoudis (a1) (a2)...

Abstract

Selective epitaxial growth (SEG) of silicon-germanium (SiGe) films on patterned-oxide silicon substrates, using a tubular hot-wall low pressure chemical vapor deposition (LPCVD) system, is demonstrated in this study. This conventional system is proposed as a low cost alternative for SiGe epitaxial growth. Three process improvements needed to achieve quality growth are discussed. First, the hydrogen bake process is modified to eliminate Ge-outgassing. Secondly, a Si SEG buffer layer is deposited prior to SiGe SEG. Finally, a small flow of dichlorosilane is introduced during the temperature ramp-down period prior to SiGe SEG. The growth results are discussed in terms of growth selectivity, thickness uniformity, growth rate, defect density, SiGe film composition, and electrical properties.

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